Gallium antimonide texturing for enhanced light extraction from infrared optoelectronics devices

Infrared Light Emission from Semiconductor Devices

We present results using near-infrared (NIR) cameras to study emission characteristics of common defect classes for integrated circuits (ICs). The cameras are based on a liquid nitrogen cooled HgCdTe imaging array with high quantum efficiency and very low read noise. The array was developed for infrared astronomy and has high quantum efficiency in the wavelength range from 0.8 to 2.5 pm. For co...

Self- and Zinc Diffusion in Gallium Antimonide

Gallium extraction from Jajarm Bayer process liquor using micro-emulsions

Gallium extraction from Jajarm Bayer process liquor (Jajarm, Iran) was investigated using microemulsions. Also the behavior of aluminum was studied as an impurity. Kelex100 (4-ethyl, 1-methyl, 7-octyl, 8-hydroxyquinoleine), iso-decanol and n-butanol, and kerosene were used as the surfactant, co-surfactant, and oil phase, respectively. Ternary phase diagrams were produced using various co-surfac...

Zinc oxide and gallium doped zinc oxide nanowires for optoelectronics

Zinc oxide (ZnO) nanostructures are become an important matter of study since they can be used in nanoscale optoelectronics for applications such as memory storage, logic circuits, solid-state gas-, bioor light-sensors, solar cells, field effect transistors, field effect displays, and short wavelength light emitting diodes. ZnO is a semiconductor with a direct and wide band-gap around 3.4 eV, a...

A New Optical Implementation of Reversible Fulladder Using Optoelectronics Devices

This study introduces a reversible optical fulladder. Also optical NOT and NOR gates are implemented through Electro-Absorption-Modulator / Photo Detector (EAM/PD) pairs, were utilized for fulfilling reversible R gate. Then, reversible fulladder was designed based on the proposed reversible optical R gate. The operation of the suggested fulladder was simulated using Optispice and it was fou...